The elastic stress distribution resulting from both lattice mismatch and thermal mismatch in a film/graded layer/substrate system is considered. Both numerical and analytical models have been developed previously to analyze this problem. An alternative analytical model is developed in the present study to derive the exact closed-form solution. Specific results are calculated for the GaAs/graded GaAs-Si/Si systems. The present results agree With existing numerical and analytical results. The difference between the present analytical model and existing analytical models. is discussed. (C) 2003 Elsevier B.V. All rights reserved.