As the best results reported to date, high-quality poly-silicon thin film materials with huge grains have been fabricated on. large-area glass substrates using the technique of excimer laser re-crystallization. It has been shown that the nucleation and growth of grains in poly-silicon films were well controlled. A uniform distribution of grains has been achieved at room temperature for substrates. Using a substrate temperature of 650degreesC, films with grains over 60 mum have been demonstrated. The excellent quality of the re-crystallized films was demonstrated using the evidence from transmission electron microscopy and secondary ion mass spectroscopy, respectively. (C) 2003 Elsevier B.V. All rights reserved.