Journal of Crystal Growth, Vol.260, No.1-2, 109-114, 2004
The grain size effec of the Pb(Zr0.45Ti0.55)O-3 thin films deposited on LaNiO3-coated silicon by modified sol-gel process
Highly (100) oriented PZT thin films with different grain sizes have been deposited on an LaNiO3-coated silicon substrate by a modified sol-gel process. The growth mechanism of films with high (100) orientation and the effects of grain size on the dielectric and ferroelectric properties of the films are qualitatively discussed. Measurements of dielectric and ferroelectric properties reveal that films of large grain sizes present large relative dielectric permittivity and large remnant polarization. (C) 2003 Elsevier B.V. All rights reserved.