Lanthanum nickel oxide (LaNiO3:LNO) thin films were grown on SiO2/Si substrates by a metallo-organic decomposition method, and their crystalline structure, microstructure and electrical properties were investigated. X-ray diffraction analysis indicated that fully (100)oriented perovskite LaNiO3 films could be obtained by annealing at 600 degrees C. Transmission electron microscopy (TEM) images showed that the films consisted of packed grains with a mean grain size of approximately 20 nm and some organic compounds. The resistivity of the LaNiO3 films decreased as the annealing temperature increased rapidly from 500 to 600 degrees C, and increased with annealing temperature from 700 degrees C. The LaNiO3 films annealed at 600 degrees C had a lower resistivity of 9.27 x 10(-6) Omega m, because they mainly crystallized in the perovskite and their surface was crack-free and very smooth. (c) 2006 Elsevier B.V. All rights reserved.