The silicon carbide films were grown on a Si(1 1 1) substrate by radio frequency (RF) magnetron sputtering at room temperature. Carbon nanowires were obtained after annealing at 1150degreesC for 3 h in a H-2 atmosphere, Fourier transform infrared transmission spectroscopy (FTIR), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) were employed to analyze the structure, composition and surface morphology of the films. The results confirmed the formation of carbon nanowires. (C) 2002 Elsevier Science B.V. All rights reserved.