A cantilever device with two gold coated silicon tips has been used to create two point contacts on a silicon surface. The lateral distance between the tips is 10 mu m. The tips are independently movable in vertical direction and the contact force is defined. While the contacts are closed, a complete set of electrical characteristics of the system is measured. An Ohmic current and a field dependent current are found, so the system behaves like a FET. The measured set of curves was fit with a MESFET model. A weak coupling between the bulk material and the current carried through surface states is found. (C) 2004 Elsevier B.V. All rights reserved.