Erbium has been incorporated in strained Si/Si0.87Ge0.13/Si multiple quantum well structures with a density of 10(18) cm(-3). The process of ion implantation was used. Samples were amorphized by silicon implantation at liquid nitrogen temperature following the erbium. implant. Recrystallization and optical activation of erbium. atoms were achieved simultaneously by low temperature annealings in the range of 550-650 degreesC. Detailed study on this low temperature window for erbium activation has been done. Reduction or complete elimination of erbium. luminescence was observed for recrystallized samples having an additional step of rapid thermal annealing. It was shown that the uncontrolled sharp quenching of temperature that follows the rapid thermal annealing process deteriorates the sample structure and the erbium luminescence.