Embedded EEPROM design in PD-SOI for application in an extended temperature range (-40 degrees C up to 200 degrees C)

Richter S; Kirsten D; Richter S; Nuernbergk D

Solid-State Electronics, Vol.49, No.9, 1484-1487, 2005

DOI10.1016/j.sse.2005.07.009 Export Citation

Embedded EEPROM design in PD-SOI for application in an extended temperature range (-40 degrees C up to 200 degrees C)

Richter S, Kirsten D, Richter S, Nuernbergk D

This article describes a novel EEPROM cell, suitable for application at high-temperatures. Measurement results obtained from this cell are presented, as well as a simulation model for this cell. Furthermore, the means of memory design using this novel cell will be indicated. (c) 2005 Elsevier Ltd. All rights reserved.

Keywords:EEPROM;high-temperature;EEPROM cell model;non-volatile memory design