Improvement of photoresist removal efficiency in ozonated water cleaning system

Jonghyuck Lee; Kibyung Park; Sangwoo Lim

Journal of Industrial and Engineering Chemistry, Vol.14, No.1, 100-104, January, 2008

DOI10.1016/j.jiec.2007.07.003 Export Citation

Improvement of photoresist removal efficiency in ozonated water cleaning system

Jonghyuck Lee, Kibyung Park, and Sangwoo Lim^†

Department of Chemical Engineering, Yonsei University, 134 Shinchon-dong, Seodaemoon-gu, Seoul 120-749, Korea

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Ozonated water cleaning systems are used to remove photoresist and organic contaminants on silicon wafers and natural organic matter and bacteria in drinking water. In this paper, the effects of O-3 concentration, the system of ozonated water vapor, and substrate temperature on the removal efficiency of photoresist were investigated. A 11.59 kcal/mol of activation energy was obtained for the reaction between aqueous O-3 and I-line photoresist. Increasing the process temperature increases the reaction rate of aqueous O-3 and photoresist, but reduces the solubility Of O-3 in water for O-3-injected system. Therefore, it is important to deliver aqueous O-3 to the wafer surface effectively. The removal rate of photoresist has been accelerated by controlling formation of a boundary layer as well as the temperature of the ozonated water and O-3 solubility. When water vapor was generated with O-3 and sprayed through a nozzle, the highest removal rate of photoresist, 221 nm/min, was obtained. From the results observed in this study, it is concluded that it is important to have a fast uniform boundary layer formation, a thin boundary layer, and production of high concentrations Of O-3 in the chamber in order to improve the removal efficiency of photoresist in the ozonated water system. (c) 2007 The Korean Society of Industrial and Engineering Chemistry. Published by Elsevier B.V. All rights reserved.

Keywords:ozone;ozonated water;photoresist removal;boundary layer thickness

[References]

Franssila S, Introduction of Microfabrication, Wiley, West Sussex, 2004, p. 133
Hills GW, Cook JM, in: Y. Nishi, R. Doering (Eds.), Handbook of Semiconductor Manufacturing Technology, Marcel Dekker, New York, 2000, p. 655
Clews PJ, Nelson GC, Matlock CA, Resnick PJ, Adkins CLJ, Korbe NC, in: J. Ruzyllo, R.E. Novak (Eds.), Proceedings of the 4th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing, The Electrochemical Society Inc., New Jersey (1996)
Noda S, Kawase K, Horibe H, Kuzumoto M, Kataoka T, J. Electrochem. Soc., 152(1), G73 (2005)
Siddiqui MS, Amy GL, Murphy BD, Water Res., 31, 3098 (1997)
L. Meunier, Canonica S, von Gunten U, Water Res., 40, 864 (2006)
Wolf S, Tauber RN, Silicon Processing for the VLSI Era, vol. 1. Process Technology, 2nd ed., Lattice Press, California, 2000, p. 500
Noda S, Miyamoto M, Horibe H, Oya I, Kuzumoto M, Kataoka T, in: Proceedings of the Semiconductor Manufacturing Symposium 2001 of IEEE International, IEEE, San Jose, (2001), p. 233
DeGendt S, Wauters J, Heyns M, Solid State Technol., 41, 57 (1998)
Bablon G, Bellamy WD, Bourbigot MM, Daniel FB, Dore M, Erb F, Gordon G, Langlais B, Laplanche A, Legube B, Martin G, Masschelein WJ, Pacey G, Reckhow DA, Ventresque C, in: B. Langlais, D.A. Rechhow, D.R. Brink (Eds.), Ozone inWater Treatment: Application and Engineering, Lewis Publishers, Chelsea, 1991, p. 12
DeGendt S, Snee P, Cornelissen I, Lux M, Vos R, Mertens PW, Knotter DM, Meuris MM, Heyns M, Solid State Phenom., 65, 165 (1999)
Nelson S, Solid State Technol., 42, 107 (1999)
Hart EJ, Sehested K, Holcman J, Anal. Chem., 55, 46 (1983)
Pavia DL, Lampman GM, Kriz GS, Introduction to Spectroscopy, 3rd ed., Brooks/Cole, Ontario, 2001, p. 13
Rischbieter E, Stein H, Schumpe A, J. Chem. Eng. Data, 45, 338 (2000)
Hinds WC, Aerosol Technology, 2nd ed., Wiley.Interscience Publication, New York, 1999, p. 141

[Related Articles]

[1] Franssila S, Introduction of Microfabrication, Wiley, West Sussex, 2004, p. 133

[2] Hills GW, Cook JM, in: Y. Nishi, R. Doering (Eds.), Handbook of Semiconductor Manufacturing Technology, Marcel Dekker, New York, 2000, p. 655

[3] Clews PJ, Nelson GC, Matlock CA, Resnick PJ, Adkins CLJ, Korbe NC, in: J. Ruzyllo, R.E. Novak (Eds.), Proceedings of the 4th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing, The Electrochemical Society Inc., New Jersey (1996)

[4] Noda S, Kawase K, Horibe H, Kuzumoto M, Kataoka T, J. Electrochem. Soc., 152(1), G73 (2005)

[5] Siddiqui MS, Amy GL, Murphy BD, Water Res., 31, 3098 (1997)

[6] L. Meunier, Canonica S, von Gunten U, Water Res., 40, 864 (2006)

[7] Wolf S, Tauber RN, Silicon Processing for the VLSI Era, vol. 1. Process Technology, 2nd ed., Lattice Press, California, 2000, p. 500

[8] Noda S, Miyamoto M, Horibe H, Oya I, Kuzumoto M, Kataoka T, in: Proceedings of the Semiconductor Manufacturing Symposium 2001 of IEEE International, IEEE, San Jose, (2001), p. 233

[9] DeGendt S, Wauters J, Heyns M, Solid State Technol., 41, 57 (1998)

[10] Bablon G, Bellamy WD, Bourbigot MM, Daniel FB, Dore M, Erb F, Gordon G, Langlais B, Laplanche A, Legube B, Martin G, Masschelein WJ, Pacey G, Reckhow DA, Ventresque C, in: B. Langlais, D.A. Rechhow, D.R. Brink (Eds.), Ozone inWater Treatment: Application and Engineering, Lewis Publishers, Chelsea, 1991, p. 12

[11] DeGendt S, Snee P, Cornelissen I, Lux M, Vos R, Mertens PW, Knotter DM, Meuris MM, Heyns M, Solid State Phenom., 65, 165 (1999)

[12] Nelson S, Solid State Technol., 42, 107 (1999)

[13] Hart EJ, Sehested K, Holcman J, Anal. Chem., 55, 46 (1983)

[14] Pavia DL, Lampman GM, Kriz GS, Introduction to Spectroscopy, 3rd ed., Brooks/Cole, Ontario, 2001, p. 13

[15] Rischbieter E, Stein H, Schumpe A, J. Chem. Eng. Data, 45, 338 (2000)

[16] Hinds WC, Aerosol Technology, 2nd ed., Wiley.Interscience Publication, New York, 1999, p. 141