Effect of wafer resistivity and HF concentration on the formation of vertically aligned porous silicon

Yonughwan Lee; Jonghyuck Lee; Yonggun Shul; Sangwoo Lim

Journal of Industrial and Engineering Chemistry, Vol.14, No.1, 105-109, January, 2008

DOI10.1016/j.jiec.2007.07.004 Export Citation

Effect of wafer resistivity and HF concentration on the formation of vertically aligned porous silicon

Yonughwan Lee, Jonghyuck Lee, Yonggun Shul , and Sangwoo Lim^†

Department of Chemical Engineering, Yonsei University, Seoul 120-749, Korea

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In this study, the mechanism of vertically aligned porous silicon formation was examined. Silicon wafers with various resistivities and electrolytes containing different HF concentrations were used to explain porous silicon formation by the reaction at the silicon/electrolyte interface. Total pore volume increased proportionally to the current applied and anodization time. As the concentration of HF increased, pore depth and total pore volume formed in silicon anodization increased, then decreased beyond the optimum point. At a given applied current, total pore volume formed by anodization increased with an increase in resistivity of silicon wafer, but then decreased. From the mechanism of silicon etching and schematic isoetch contour of silicon suggested in this study, it is concluded that the formation of porous silicon is determined by an accumulation of F- near the silicon/electrolyte interface in silicon anodization. (c) 2007 The Korean Society of Industrial and Engineering Chemistry. Published by Elsevier B.V. All rights reserved.

Keywords:anodization;vertically aligned porous silicon;reaction mechanism;oxidation;etching

[References]

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[Related Articles]

[1] McCord P, Yau SL, Bard AJ, Science, 257, 68 (1992)

[2] Canham LT, Appl. Phys. Lett., 57, 1046 (1990)

[3] Peter LM, Riley DJ, Snow PA, Electrochem. Commun., 2, 461 (2000)

[4] Yu LZ, Wie CR, Electron. Lett., 28, 911 (1992)

[5] Seals L, Gole JL, Tse LA, Hesketh PJ, J. Appl. Phys., 91, 2519 (2002)

[6] Gold S, Chu KL, Lu C, Shannon MA, Masel RI, J. Power Sources, 135(1-2), 198 (2004)

[7] Yamaguchi T, Ibe M, Nair BN, Nakao S, J. Electrochem. Soc., 149(11), A1448 (2002)

[8] Pichonat T, Gauthier-Manuel B, Hauden D, Chem. Eng. J., 101, 107 (2004)

[9] Turner DR, J. Electrochem. Soc., 105, 402 (1958)

[10] Ronga I, Bsiesy A, Gaspard F, Hrino R, Ligeon M, Muller F, Halimaoui A, J. Electrochem. Soc., 138, 1403 (1991)

[11] Theunissen MJJ, J. Electrochem. Soc., 119, 351 (1972)

[12] Lehmann V, J. Electrochem. Soc., 140, 2836 (1993)

[13] Lehmann V, Stengl R, Luigart A, Mater. Sci. Eng. B-Solid State Mater. Adv. Technol., 69-70, 11 (2000)

[14] Lehmann V, Gosele U, Appl. Phys. Lett., 58, 856 (1991)

[15] Lin JC, Tsai WC, Lee PW, Electrochem. Commun., 9, 449 (2007)

[16] Tanaka H, Shimada A, Kinoshita A, J. Electrochem. Soc., 151(6), C439 (2004)

[17] Fll H, Christophersen M, Carstensen J, Hasse G, Mater. Sci. Eng. R-Rep., 39, 93 (2002)

[18] Zhang XG, Collins SD, Smith RL, J. Electrochem. Soc., 136, 1561 (1989)

[19] Memming R, Schwandt G, Surf. Sci., 4, 109 (1966)