Synthesis of gallium-catalyzed silicon nanowires by hydrogen radical-assisted deposition method

Minsung Jeon; Yoshihiro Tomitsuka; Koichi Kamisako

Journal of Industrial and Engineering Chemistry, Vol.14, No.6, 836-840, November, 2008

DOI10.1016/j.jiec.2008.06.004 Export Citation

Synthesis of gallium-catalyzed silicon nanowires by hydrogen radical-assisted deposition method

Minsung Jeon^†, Yoshihiro Tomitsuka, and Koichi Kamisako

Department of Electronic and Information Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Nakacho, Koganei, Tokyo 184-8588, Japan

E-mail:

Gallium-catalyzed silicon nanowires (SiNWs) were synthesized by the hydrogen radical-assisted deposition method. The voluminous quantities of SiNWs with various crystal growth directions were synthesized and their characteristics were estimated by using XRD, FESEM, TEM and EDX analyses. Most of the Ga-capped SiNWs were directly grown with some smoothly curved SiNWs. Large quantities of small-SiNWs with diameters of 20-80 nm were tree-likely grown on the large-SiNWs surface. The diameters of large-SiNWs were approximately 200 nm-2 μm. Furthermore, a simple model of growth mechanism for sub-grown silicon nanowires by the hydrogen radical-assisted deposition method was proposed.

Keywords:Ga catalyst;Silicon nanowires;Hydrogen radicals;VLS mechanism

[References]

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[Referenced By]

[1] Kim JW, Im JS, Cho T, Basova YV, Edie DD, Lee YS, J. Ind. Eng. Chem., 13(5), 757 (2007)

[2] Wong EW, Sheehan PE, Lieber CM, Science, 277(5334), 1971 (1997)

[3] Fan SS, Chapline MG, Franklin NR, Tombler TW, Cassell AM, Dai HJ, Science, 283(5401), 512 (1999)

[4] Kim JS, Park WI, Lee CH, Yi GC, J.Korean Phys. Soc., 49, 1635 (2006)

[5] Soh HT, Quate CF, Morpurgo AF, Marcus CM, Kong J, Dai H, Appl. Phys. Lett., 75, 627 (1999)

[6] Cui Y, Lieber CM, Science, 291(5505), 851 (2001)

[7] Duan XF, Wang JF, Lieber CM, Appl. Phys. Lett., 76, 1116 (2000)

[8] Kang SH, Kim JY, Kim HS, Sung YE, J. Ind. Eng. Chem., 14(1), 52 (2008)

[9] Xia YN, Yang PD, Sun YG, Wu YY, Mayers B, Gates B, Yin YD, Kim F, Yan YQ, Adv. Mater., 15(5), 353 (2003)

[10] Duan X, Huang Y, Agarwal R, Lieber CM, Nature, 421, 241 (2003)

[11] Hu J, Odom TW, Lieber CM, Acc. Chem. Res., 32, 435 (1999)

[12] Kelly MT, Chun JK, Bocarsly AB, Nature, 382(6588), 214 (1996)

[13] Nikolaides MG, Rauschenbach S, Bausch AR, J. Appl. Phys., 95, 3811 (2004)

[14] Liu ZQ, Zhou WY, Sun LF, Tang DS, Zou XP, Li YB, Wang CY, Wang G, Xie SS, Chem. Phys. Lett., 341(5-6), 523 (2001)

[15] Yu DP, Bai ZG, Ding Y, Hang QL, Zhang HZ, Wang JJ, Zou YH, Qian W, Xiong GC, Zhou HT, Feng SQ, Appl. Phys. Lett., 72, 3458 (1998)

[16] Lee J, Oh J, Tak Y, J. Ind. Eng. Chem., 10(6), 1058 (2004)

[17] Morales AM, Lieber CM, Science, 279(5348), 208 (1998)

[18] Wagner RS, Ellis WC, Appl. Phys. Lett., 4, 89 (1964)

[19] Givargizov EI, J. Cryst. Growth, 31, 20 (1975)

[20] Westwater J, Gosain DP, Tomiya S, Usui S, Ruda H, J. Vac. Sci. Technol. B, 15(3), 554 (1997)

[21] Kamins TI, Williams RS, Chen Y, Chang YL, Chang YA, Appl. Phys. Lett., 76, 562 (2000)

[22] Barsotti RJ, Fischer JE, Lee CH, Mahmood J, Adu CKW, Eklund PC, Appl. Phys. Lett., 81, 2866 (2002)

[23] Sunkara MK, Sharma S, Miranda R, Linda G, Dickey EC, Appl. Phys. Lett., 79, 1546 (2001)

[24] Jeon MS, Kamisako K, Appl. Surf. Sci., 254, 7703 (2008)

[25] Jeon MS, Tomitsuka Y, Maishigi K, Uchiyama H, Aoyagi M, Kamisako K, IEICE Electron. Express, 5, 586 (2008)

[26] Jeon MS, Uchiyama H, Kamisako K, Mater. Lett., 63, 246 (2009)

[27] Okamoto H, Desk Handbook Phase Diagrams for Binary Alloys, ASM International, Materials Park, Ohio, 2000

[28] Jeon MS, Kamisako K, Mater. Lett., 62, 3903 (2008)

[29] Dai L, You LP, Duan XF, Lian WC, Qin GG, Phys. Lett. A, 335, 304 (2005)

[30] Wagner RS, Whisker Technology, Wiley, New York, 1970

[31] Wu YC, Huynh L, Barrelet CJ, Bell DC, Lieber CM, Nano Lett., 4, 433 (2004)

[32] Lu W, Lieber CM, J. Phys. D: Appl. Phys., 39, 387 (2006)