We report on a direct epitaxial growth approach for the heterogeneous integration of high-speed III-V devices with Si CMOS logic on a common Si substrate. InP-based heterojunction bipolar transistor (HBT) structures were successfully grown on Si-on-lattice-engineered-substrate (SOLES) and Ge-on-insulator-on-Si (GeOI/Si) substrates using molecular beam epitaxy. Structurally, the epiwafers exhibit sharp interfaces and a threading dislocation density of 3.5 x 10(7) cm(-2) as measured by plan-view transmission electron microscopy. HBT devices fabricated on GeOI/Si substrates have current gain of 55-60 at a base sheet resistance of 650-700 Omega/sq, and f(t) and f(max) of around 220 GHz. HBT structures with DC and RF performance similar to those grown on lattice-matched InP were also achieved on patterned SOLES substrates with growth windows as small as 15 x 15 mu m(2). These results demonstrate a promising path of heterogeneous integration and selective placement of Ill-V devices at arbitrary locations on Si CMOS wafers. (C) 2008 Elsevier B.V. All rights reserved.