Compensation doping of conjugated polymers is used to create a composite that contains a sufficient level of ions to support the doped form of the polymer upon removal of the compensating ion. Interfacing this form of conjugated polymer with another semiconductor capable of becoming doped upon uptake of the compensating ion allows a field-driven change in conductivity to be achieved in the solid state. As a result, this system is capable of rectification as well as the storage of charge and can be highly tunable. The electrodeposition of the heterojunctions is scalable to the nanometer range and provides a means for creating devices on existing crossbar structures outside strictly controlled fab lines.