A simple method was introduced to synthesize nanomaterials of a new metal selenide, InSe nanowires (NWs). The NWs had diameters ranging from 60 to 250 nm and Lengths from several micrometers to tens of micrometers. The photoresponse characteristics of InSe NWs were investigated by fabricating devices based on an individual NW. With the light irradiation on and off, the current of the device could be switched at "high" and "low" current with the "ON/OFF" ratio as high as 50. Moreover, the high stability of the InSe NWs was demonstrated indicating the bright future of NWs for low cost, ultrahigh density nanometer sized photoelectric devices.