CuAl0.90Zn0.10S2 thin films were deposited by pulsed plasma deposition. The dependence of structural, surface morphology, electrical, and optical properties of the films on substrate temperature was investigated. X-ray diffraction patterns reveal that the film be amorphous structure. The electrical properties are sensitive to the substrate temperature. A typical sample with conductivity of 50.9 S cm(-1), carrier mobility of 3.13 cm(2) V-1 s(-1), carrier concentration of 1.41 x 10(19) cm(-3), and average transmission of 74% in visible range of 400-700 nm was obtained. A transparent p-CuAlS2:Zn/n-In2O3:W heterogeneous diode was also fabricated and exhibits rectifying current-voltage characteristics. The ratio of forward current to the reverse current exceeds 80 within the range of applied voltages of -3.0-+3.0 V and the turn-on voltage is approximately 0.5-0.8 V. (C) 2009 American Vacuum Society. [DOI: 10.1116/1.3244565]