A new ternary compound HoAl0.34Ge2 has been synthesized and studied from 298 K to 773 K by means of X-ray powder diffraction technique. The crystal structure of HoAl0.34Ge2. has been determined by using Rietveld method. The ternary compound HoAl0.34Ge2 crystallizes in the orthorhombic defect CeNiSi2 structure type (space group Cmcm, a = 0.40905(1) nm, b = 1.61575(5) nm, c= 0.39395(1) nm, Z= 4 and D-calc = 8.145 g cm(-3)). The average thermal expansion coefficients (alpha) over bar (a), (alpha) over bar (b) and (alpha) over barc of HoAl0.34Ge2 are 1.89 x 10(-5) K-1, 0.87 x 10(-5) K-1 and 1.59 x 10(-1) K-1, respectively. The average coefficient of bulk thermal expansion (alpha) over bar (V) is 4.25 x 10(-5) K-1. Electrical resistivity of (HoAlGe2)-Ge-0.34 was measured between 5 K and 300 K. It shows metallic-like behavior of concluctivity in the investigated temperature range. (C) 2008 Published by Elsevier B.V.