In this work, high-performance low-temperature poly-silicon (LTPS) thin film transistors (TFTs) with double-gate (DG) structure and lateral grain growth have been demonstrated by excimer laser crystallization (ELC). Therefore, the DG TFTs with lateral silicon grains in the channel regions exhibited better current-voltage characteristics as compared with the conventional solid-phase crystallized (SPC) poly-Si double-gate TFTs or conventional ELC top-gate (TG) TFTs. The proposed ELC DG TFTs (W/L = 1.5/1.5 mu m) had the field-effect-mobility exceeding 400 cm(2)/V s, on/off current ratio higher than 10(8), superior short-channel characteristics and higher current drivability. (c) 2007 Elsevier Ltd. All rights reserved.