Characterization of charging effect of citrate-capped Au nanoparticle pentacene device

Hyung-Jun Kim; Sung Mok Jung; Bong-Jin Kim; Tae-Sik Yoon; Yong-Sang Kim; Hyun Ho Lee

Journal of Industrial and Engineering Chemistry, Vol.16, No.5, 848-851, September, 2010

DOI10.1016/j.jiec.2010.03.021 Export Citation

Characterization of charging effect of citrate-capped Au nanoparticle pentacene device

Hyung-Jun Kim, Sung Mok Jung, Bong-Jin Kim, Tae-Sik Yoon¹, Yong-Sang Kim¹, and Hyun Ho Lee^†

Department of Chemical Engineering, Myongji University, Nam-dong, Cheoin-gu, Yongin-si, Gyeonggi-do 449-728, Republic of Korea
¹Department of Nano Science & Engineering, Myongji University, Nam-dong, Cheoin-gu, Yongin-si, Gyeonggi-do 449-728, Republic of Korea

E-mail:

Capacitance-voltage hysteresis for a non-volatile memory was realized in a metal-pentacene- insulator-silicon (MPIS) device using gold (Au) nanoparticles (NPs) intervened between pentacene and SiO2 insulator. A memory window higher than 2.0 V was obtained under (±) 5 V programming sweeping range. The SiO2 as thick as 30 nm was adopted as the dielectric layer, and 3-aminopropyl-triethoxysilane (APTES) was used for self-assembling of Au NPs monolayer. In addition, citrate-functionalized Au NPs was dip-coated and used as charge storage elements. Formation of a monolayer of the Au NPs was confirmed by HR-SEM and AFM. Capacitance-voltage hysteresis in this study was resulted from the charge storage in the layer of Au NPs.

Keywords:Au nanoparticle;C-V hysteresis;MPIS device

[References]

Ouyang J, Chu CW, Sieves D, Yang Y, Appl. Phys. Lett., 86, 123507 (2005)
Prakash A, Ouyang J, Lin JL, Yang Y, J. Appl. Phys., 100, 054309 (2006)
Bozano LD, Kean BW, Deline VR, Salem JR, Scott JC, Appl. Phys. Lett., 84, 607 (2004)
Colle M, Buchel M, De Leeuw DM, Org. Electron., 7, 305 (2006)
Paul S, Pearson C, Molloy A, Cousins MA, Green M, Kolliopoulou S, Dimitrakis P, Normand P, Tsoukalas D, Petty MC, Nano Lett., 3, 533 (2003)
Leong WL, Lee PS, Mhaisalkar SG, Chen TP, Dodabalapur A, Appl. Phys. Lett., 90, 042906 (2007)
Novembre C, Guerin D, Lmimouni K, Gamrat C, Vuillaume D, Appl. Phys. Lett., 92, 103314 (2008)
Lee MS, Lee GD, Park SS, Hong SS, J. Ind. Eng. Chem., 9, 89 (2002)
Yook KS, Jeon SO, Joo CW, Lee JY, J. Ind. Eng. Chem., 15(3), 328 (2009)
Casey HC Jr., Devices for Integrated Circuits, Wiley, New York (1999)

[Referenced By]

[Related Articles]

[1] Ouyang J, Chu CW, Sieves D, Yang Y, Appl. Phys. Lett., 86, 123507 (2005)

[2] Prakash A, Ouyang J, Lin JL, Yang Y, J. Appl. Phys., 100, 054309 (2006)

[3] Bozano LD, Kean BW, Deline VR, Salem JR, Scott JC, Appl. Phys. Lett., 84, 607 (2004)

[4] Colle M, Buchel M, De Leeuw DM, Org. Electron., 7, 305 (2006)

[5] Paul S, Pearson C, Molloy A, Cousins MA, Green M, Kolliopoulou S, Dimitrakis P, Normand P, Tsoukalas D, Petty MC, Nano Lett., 3, 533 (2003)

[6] Leong WL, Lee PS, Mhaisalkar SG, Chen TP, Dodabalapur A, Appl. Phys. Lett., 90, 042906 (2007)

[7] Novembre C, Guerin D, Lmimouni K, Gamrat C, Vuillaume D, Appl. Phys. Lett., 92, 103314 (2008)

[8] Lee MS, Lee GD, Park SS, Hong SS, J. Ind. Eng. Chem., 9, 89 (2002)

[9] Yook KS, Jeon SO, Joo CW, Lee JY, J. Ind. Eng. Chem., 15(3), 328 (2009)

[10] Casey HC Jr., Devices for Integrated Circuits, Wiley, New York (1999)