Conducting-insulating and magnetic-nonmagnetic segments are produced using pre-fabricated ion induced nano ripples. Ripple structures of Si are formed by oblique angle keV energy oxygen or argon ion bombardment. Further oxygen ion implantation leads to insulating-semiconducting zone formation whereas Fe ion implantation helps to produce nonmagnetic-magnetic stripes. Conducting Atomic Force Microscopy, Magnetic Force Microscopy and Energy dispersive X-ray spectroscopy shows the coexistence of semiconducting-insulating and magnetic-nonmagnetic zones. Grazing angle keV ion bombardment fabricates parallel metal ripples from polycrystalline thin films. C-AFM measurements show that the crests of the ripples are regularly spaced unidirectional conducting wires. (C) 2011 Elsevier B. V. All rights reserved.