| 학회 |
한국재료학회 |
| 학술대회 |
2021년 가을 (11/24 ~ 11/26, 경주 라한호텔) |
| 권호 |
27권 2호 |
| 발표분야 |
A. 전자/반도체 재료 분과 |
| 제목 |
Development of a Basic Model for Cerium Oxide Based Interfacial Switching Memory Device Using Finite Element Method. |
| 초록 |
Current revolutions in the era of semiconductor industry require new technologies for memory and computation beyond the standard of CMOS based platform. In the frame of memory devices and storage technology, Resistive random access memory (ReRAM or RRAM) is extremely promising candidate. In the era of these eminent technologies, to serve we are developing a model for interfacial switching mechanism using finite element modelling method. The model system consists of cerium oxide doped with some metal ions where electric field urges these metal ions to drift. Concentration of metal ions turns out to be higher or lower at one electrode causes resistance change by modulating Schottky barrier height. Two key factors can be considered necessary to adopt in order to model this phenomena. One is concentration dependent Schottky barrier height at the oxide/electrode interface and other is the drift and diffusion equations for metal ions. Investigation of device performance in terms of material parameters for memory and synapse devices is our ultimate goal with this report. |
| 저자 |
Sagar Khot, 정동명, 권용우
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| 소속 |
홍익대 |
| 키워드 |
<P>RRAM; Resistive switching; Finite element modeling; Interfacial switching mechanism</P>
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| E-Mail |
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