| 초록 |
Controlling the contact properties of a copper (Cu) electrode, which has a fast RC response, is an important issue in improving the performance of a thin film transistor (TFT) for high speed response application. Because of electro-migration, it diffuses into the oxide semiconductor with forming electron trap states which cause the degradation of TFT performance. To solve this problem, various self-assembled monolayers (SAMs) are suggested as the solution, such as (3-Aminopropyl) trimethoxysilane and (3-Mercaptopropyl) trimethoxysilane (MPTS). SAM layer effectively acts as a copper diffusion barrier between oxide semiconductor and Cu electrode, preventing copper diffusion and improving TFT on-off performance. However, previous studies only show a copper diffusion barrier property simply using SAM, without argument to identify and control the interaction between SAM and oxide semiconductor. Herein, we present that the method of controlling the functional groups of the SAM using a chemical coupling method can prevent the copper diffusion characteristics of indium gallium zinc oxide (IGZO) based TFTs and control the electrical performance at the same time. Using Mono-amine and di-amine group SAMs, the threshold voltage and mobility of TFTs can be controlled by coupling functional groups with fluorine and sulfur. Controlling electrical properties using a coupling SAM method can be a promising future electronics technology using a simple solution process rather than chemical and physical deposition. |
