| 학회 |
한국재료학회 |
| 학술대회 |
2010년 봄 (05/13 ~ 05/14, 삼척 팰리스 호텔) |
| 권호 |
16권 1호 |
| 발표분야 |
G. Display (LCD, PDP, OLED) Materials(디스플레이 재료) |
| 제목 |
온도에 따른 a-IGZO TFT 소자 게이트 바이어스 스트레스 특성 연구 |
| 초록 |
The transfer characteristic of amorphous indium gallium zinc oxide thin film transistor (a-IGZO TFTs) was measured in order to analyze the behavior of the subthreshold regions and above-threshold. Applying a gate bias stress to a-IGZO TFTs with various temperatures was found to induce a threshold voltage shift and a change of the subthreshold gate voltage swing. The characteristic change is dependant on the ambient temperature when applying a gate bias. The threshold voltage was shifted from -0.2V to 0.1V and the subthreshold swing was increased from 1.37 to 1.72V/dec applying +10V gate bias voltage in the room temperature. But when the temperature for applying +10V gate bias voltage is 140℃, the threshold voltage was shifted from -0.2V to 5.65V and the the subthreshold swing was decreased from 1.37 to 0.54 ㎠/Vs. |
| 저자 |
이명언1, 이공수2, 정한욱3, 권석일3, 최병덕3
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| 소속 |
1삼성전자 LCD부문, 2삼성전자 반도체 부문, 3성균관대 |
| 키워드 |
a-IGZO; BTS(Bias temperature stress)
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| E-Mail |
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