| 초록 |
Resistive random access memory (ReRAM or RRAM) is one of promising emerging nonvolatile memory technologies due to the simple cell structure, the compatibility with the CMOS process, and the excellence performance. The switching mechanisms are classified into two types: one is filamentary and the other is interfacial. Most of modeling studies have been conducted for the filamentary switching. In this work, we report a model for the interfacial switching mechanism. The cerium oxide doped with some metal ions was selected as a model system. In this system, the metal ions drift along the electric field. When biased, the concentration of the metal ions become higher or lower at one electrode, which leads to the resistance change by modulating the Schottky barrier height. We modeled this phenomena by adopting the drift and diffusion equations for metal ions and the concentration dependent Schottky barrier height at the oxide/electrode interface. We will investigate the device performance in terms of the material parameters for memory and synapse devices. |
