| 초록 |
In the present investigation, we successfully fabricated the ytterbium (Yb2+) doped CsPbI2Br-based inorganic perovskite solar cells (IPVSCs). Here, we varied the concentration of Yb in the CsPb1−xYbxI2Br (x=0-0.04) perovskite precursor solution. The optimum concentration of Yb showed improved morphology, crystal growth and photovoltaic performance. For the champion CsPb0.97Yb0.03I2Br-based device, we achieved the highest 15.41 % power conversion efficiency (PCE) with a short circuit current density (JSC) of 15.94 mAcm-2, an open circuit voltage (VOC) of 1.267 V and a fill factor (FF) of 76.35 %, which is higher than the CsPbI2Br-based device. The Yb doping benefits to defect passivation and improve crystal growth and therefore, improved performance is observed. Moreover, the champion CsPb0.97Yb0.03I2Br device exhibits increased stability of 94 % of initial efficiency after 280 h under 85 °C thermal annealing. Our results provide a new method to rooms the performance of the photovoltaic application. |
