| 학회 | 한국재료학회 |
| 학술대회 | 2017년 봄 (05/17 ~ 05/19, 목포 현대호텔) |
| 권호 | 23권 1호 |
| 발표분야 | G. 나노/박막 재료 분과 |
| 제목 | Al2O3 Thin Film Encapsulation by Spatial Atomic Layer Deposition |
| 초록 | The environmental instabilities of organic light-emitting diodes (OLEDs) still remain a big challenge to commercialization due to their vulnerability to ambient moisture and oxygen. For a stable device operation, various encapsulation technologies have been developed. Among them, thin film encapsulation (TFE) is required to future flexible electronics. Comparing different TFE techniques, thin films using atomic layer deposition (ALD) have been shown to provide superior protection. Nevertheless, industrial applications of conventional ALD are limited by low deposition rate. One way to speed up the process is to use spatial ALD, which is able to achieve high throughput number. Compared to temporal ALD, in which the precursors are dosed sequentially, in spatial ALD precursors are supplied continuously and simultaneously but in different physical locations. Thus, spatial ALD is a promising candidate for TFE of large-scale flexible electronics. This study describes the moisture permeation barrier properties of Al2O3 thin films deposited by spatial ALD at 100 °C on an industrially relevant 2G substrate (370 × 470 mm2). Trimethylaluminum (TMA, Al(CH3)3) and ozone (O3) were used as precursors of aluminum and oxygen, respectively. The substrate was placed on the substrate carrier, which was moved at scan speeds of 100, 400, and 800 mm/s using vacuum single linear motion. The moisture barrier performance was characterized by the WVTR value measured using the MOCON apparatus. Surprisingly, despite the fact that the scan speed increased eight-fold (from 100 mm/s to 800 mm/s), there was little change in the WVTR value of Al2O3 moisture barrier films (from 1.4 × 10-3 to 3.0 × 10-3 g/m2/day). In addition, we investigated the physical and chemical properties of the deposited Al2O3 thin films using SE (thickness and refractive index), FESEM (conformality), XRR (density), AES (stoichiometry and carbon concentration), and ERD (H concentration). |
| 저자 | Seokyoon Shin1, Giyul Ham2, Joohyun Park1, Juhyun Lee2, Hyeongsu Choi3, Sejin Kwon2, Hyeongtag Jeon1 |
| 소속 | 1Division of Materials Science and Engineering, 2Hanyang Univ., 3Division of Nanoscale Semiconductor Engineering |
| 키워드 | Thin Film Encapsulation; Spatial Atomic Layer Deposition; Aluminum Oxide; Organic Light Emitting Diode; Water Vapor Transmission Rate |
