| 초록 |
Photoacid Generator (PAG) has been widely known as a key component for improving the photo-sensitivity of resists in photo- and electron-beam lithography. In this work, a monomer, biphenyl sulfonium triflate 4-benzyl methacrylate (BPSTMA), and its ter-polymer, poly (GMA-CO-MMA-CO-BPSTMA) based on PAG were synthesized and characterized by 1H-NMR, DSC, TGA, and GPC. This characterization of resists exhibits good natures in thermal stability, high resolution and high sensitivity. The negatively cross-linked patterns with sub-30 nm linewidth were obtained under 100 keV. The various pitches between line patterns and exposure doses were applied in the lithographic process. These novel resists will be effectively utilized in the fabrication process of nano-scale mask features and nano-devices. |
