| 초록 |
A novel photoacid generating methacrylate monomer having a triphenylsulfonium triflate moiety as a photoacid generator (PAG) have been prepared and ter-polymerized with other methacylate(MMA)monomer and glycidyl methacrylate(GMA) for electron beam lithography (EBL). The facile syntheses of the triphenyl sulfonium methacrylate (TPSMA) monomer and PAG bound poly(GMA-MMA-TPSTMA) have allowed high content of PAG loading in the polymer. The TPSMA-polymer was characterized to render high thermal stability, high resolution and sensitivity. Thermal stability of the polymer is measured by TGA and DSC. Characterization of the polymer is achieved using other techniques such as FT-IR, 13C,1H-NMR, GPC, and UV. The negatively cross-linked patterns with sub-20 nm linewidth were obtained by electron-beam lithography under 100 keV. The various pitches between line patterns and exposure doses were applied in the lithographic process. |
