화학공학소재연구정보센터
학회 한국고분자학회
학술대회 2013년 봄 (04/11 ~ 04/12, 대전컨벤션센터)
권호 38권 1호
발표분야 고분자구조 및 물성
제목 Programmable Volatile Memory Devices of Nitrogen-Linked Poly(2,7-carbazole)s : Polymer Devices and Analysis of Devices Structure Using X-Ray Reflectivity
초록 The programmable volatile memory devices of the following nitrogen-linked poly(2,7-carbazole)s: These polymers are amorphous; however, in thin films, they are slightly oriented in the film plane. All polymers in devices with aluminum top and bottom electrodes were found to exhibit similar DRAM behaviors without polarity. They are operable with a low voltage (less than (3 V) and a high ON/OFF current ratio (105-109, depending on the polymer) over the thickness range 8-60 nm. The memory behaviors were found to be governed by space-charge limited conduction and local filament formation. These memory characteristics might originate from the electrondonating carbazole and triphenylamino units in the polymer backbones, which act as charge-trapping sites but have weak electric polarization because of the absence of counterparts. Overall, these polymers are suitable active materials for the mass production at low cost of high-performance, programmable volatile memory devices.
저자 이진석, 함석규, 이택준, 김동민, 권원상, 고용기, 노예철, 안병철, 정정운, 김경태, 정성민, 권경호, 김영용, 김종현, 송성진, 위동우, 김창섭, 이종찬, Nguyen Thi Phuong Thu, 김용진, 손보경, 이윤철, Graniel Harne A.Abrenica, 이문호
소속 포항공과대
키워드 memory; DRAM; volatile memory devices
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