| 초록 |
Antimony selenide (Sb2Se3) is a promising absorbing material for solar cells. It has attracted intense interest by researchers worldwide because of its suitable bandgap (1.1−1.3 eV), high absorption coefficient, and good carrier mobility. In the present work, metallic antimony (Sb) layers were deposited using DC sputtering, followed by the deposition of a 1 μm thick selenium (Se) layer on top of the Sb layers. Finally, the bilayers were selenized at different temperatures (200-500oC) in a rapid thermal process (RTP) system to get Sb2Se3 absorbers. The XRD patterns revealed that the films selenized at a temperature of 400oC showed good crystallinity with (221) as preferred orientations related to the orthorhombic crystal structure, respectively. The Raman scattering spectra showed the characteristics modes of Sb2Se3 at 188, 210, and 253 cm−1. The SEM, optical, and electrical studies confirmed that selenization temperature of 400oC showed a uniform and smooth surface with a band gap of 1.2 eV and p-type conductivity. Thus, our work established decisively that the generated Sb2Se3 thin films were acceptable for use in thin film solar cells. |
