| 초록 |
Titanium nitride (TiN) has been widespread used in IC industry as a component for metal gates and diffusion barriers, due to its low electrical conductivity and thermal stability. Among several deposition techniques for TiN, atomic layer deposition (ALD) using TiCl4 and NH3 is of significant interest as it enables highly conformal deposition and thickness control at moderate temperature. Although there are still technical issues such as Cl contamination, surface kinetics and even the reaction thermodynamics have not been clarified. So a full understanding of surface reaction mechanism is required to further deal with issues in TiN ALD using TiCl4/NH3. In this study, we constructed a kinetic Monte Carlo (kMC) model to simulate a TiN ALD process, based on surface reaction mechanisms calculated with DFT. Especially, we compared our growth per cycle (GPC) and Cl contamination ratio data to experimental results, and analyzed the origin of given results. |
