| 초록 |
Crystallographic orientation and microstructure changes of HfO2-Al2O3 thin films deposited by Plasma Enhanced Atomic Layer Deposition were investigated with changing deposition parameters. As Al2O3 composition of HfO2-Al2O3 thin film is decreased, the microstructure of film was changed to monoclinic from tetragonal as Al2O3 composition of HfO2-Al2O3 thin film is decreased, and the crystallographic direction was changed to the preferred (111) orientation as film thickness is decreased. as a results of changed orientation, the film's dielectric is decreased. To get the HfO2-Al2O3 thin films which have a preferred (200) orientation, we suggest that a little different supercycle has a periodically addition of small dose of Al2O3 in HfO2 thin film. |
