| 학회 |
한국재료학회 |
| 학술대회 |
2019년 봄 (05/15 ~ 05/17, 평창 알펜시아 리조트) |
| 권호 |
25권 1호 |
| 발표분야 |
A. 전자/반도체 재료 분과 |
| 제목 |
Structural and Electrical characteristics of Low-k Silicon Oxycarbide thin film deposited via Remote Plasma Atomic Layer Deposition |
| 초록 |
As electronic device dimensions have rapidly reduced and an interval between devices has become closer, resistance-capacitance delay (RC delay) caused by parasitic capacitance becomes a critical problem. Therefore, low-dielectric materials with high thermal stability and excellent step coverage were needed for reducing parasitic capacitance. SiOC film is one of the candidates for next generation low-k materials. Atomic layer deposition can be a perfect method to obtain high conformality with a self-limited reaction. Plasma is necessary to decompose precursor ligands for the ALD reaction. However, ion bombardment can cause substrate damage. That is the reason we used Remote plasma ALD (RPALD). We had investigated the low and high-temperature deposition of SiOC films via RPALD. We started the low-temperature deposition of SiOC films by applying different plasma gases. In ALD recipe, Octamethylcyclotetrasiloxane (OMCTS) was used as a precursor and Ar, H2 plasmas were used as reactants. We had conducted several experiments for chemical-, electrical- properties. SiOC film with H2 plasma showed lower dielectric constant, lower leakage current and higher breakdown voltage. Therefore, we conducted the high-temperature deposition of SiOC film with H2 plasma to investigate the possibility of SiOC films for next low-k materials which have high thermal stability. We utilized Auger electron spectroscopy (AES) to observe atomic concentration. Reflective Index values were used to predict film densities. X-ray photoelectron spectroscopy (XPS) and Fourier-transform Infrared spectroscopy (FT-IR) were carried out to observe chemical bonding structures, especially for Si and C related peaks. Au-SiOC-Si (MIS) device was fabricated to investigate electrical properties. C-V measurement was utilized to extract dielectric constants. I-V measurement was conducted for leakage current and breakdown voltage. |
| 저자 |
Yurim Kwon1, Chanwon Jung2, Jongwoo Kim3, Suhyeon Park2, Byunguk Kim3, Seokhwi Song2, Hyeongtag Jeon1
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| 소속 |
1Division of Nano-scale Semiconductor Engineering, 2Hanyang Univ., 3Division of Materials Science and Engineering |
| 키워드 |
dielectric constant; carbon concentration; atomic layer deposition (ALD)
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| E-Mail |
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