| 초록 |
A hybrid structure of organic and inorganic building blocks enables us to design and tailor new materials with desired features and functions. We adopt a photothermally activated, cross-linked, and stable metal-oxo cluster molecular assembly based on hexanuclear zirconium-oxo cluster which can be a suitable for a new dielectric material since the metal core enhances the dielectric functionality and together the organic ligand imparts a polymerizable functionality. The hexanuclear zirconium-oxo cluster is synthesized, and its thin film is prepared by a solution process and then photothermally treated with various conditions. Very interestingly, the photothermal activation strategy used in this work enables a direct patterning of the thin film like photolithography. We demonstrate that the photothermally activated zirconium-oxo cluster thin film can be successfully applied to a gate dielectric material for thin-film field-effect transistors with different active layers. |
