| 학회 |
한국공업화학회 |
| 학술대회 |
2019년 봄 (05/01 ~ 05/03, 부산 벡스코(BEXCO)) |
| 권호 |
23권 1호 |
| 발표분야 |
나노_포스터 |
| 제목 |
Effect of Post-annealing on low-k SiOCH Films deposited by PECVD |
| 초록 |
In order to meet the demand for miniaturization, high integration, and speeding up of elements, materials and formation techniques for interlayer insulating films of multilayer wiring technology are required. The previously used SiO 2 thin film has a dielectric constant of about 4.0, which is a problem that is too high. According to research, the dielectric constant of the interlayer material of metal wiring in the development of the next generation semiconductor low-k material is required to be 3.0 or less. And the properties of the genetic material generally require electrical, chemical, mechanical and thermal properties. Many studies have been reported using a methyl-based precursor to form a SiOCH film which is a low dielectric insulating film. In this paper, SiOCH films were deposited using methyl-based material Hexamethyl-disiloxane (HMDSO) using PE-CVD, and then post-annealing was performed to study the influence of post-annealing on the growth of SiOCH thin films. |
| 저자 |
전재성1, 허훈1, 유은성1, 김재훈1, 정대용2, 윤주영3, 정낙관3
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| 소속 |
1한국생산기술(연), 2인하대, 3한국표준과학(연) |
| 키워드 |
PECVE; Post-annealing; low-k Films; SiOCH
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| E-Mail |
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