| 학회 | 한국재료학회 |
| 학술대회 | 2017년 가을 (11/15 ~ 11/17, 경주 현대호텔) |
| 권호 | 23권 2호 |
| 발표분야 | F. 광기능/디스플레이 재료 분과 |
| 제목 | Formation of network air tunnel and its effect on reducing chemical attack through chemical lift off process |
| 초록 | Lift off process is needed for fabrication of gallium nitride (GaN) based vertical light emitting diode (V-LED). In this study, we proposed new way to shorten a time required for chemical lift off by network air tunnel (NAT) to reduce a chemical damage of GaN . The NAT structure was fabricated on patterned sapphire substrate (PSS) by selective growth of GaN on top of the patterns. After coating photoresist on PSS, top of the pattern was revealed as time goes on during the pyrolysis of photoresist (PR) and selective growth of GaN started in the exposed pattern area. Fabrication of GaN template was completed through epitaxial lateral overgrowth and NAT was formed along bottom plane of the PSS because PR was etched gradually through hydrogen cyanide reaction (C + NH3 → HCN + H2) during GaN growth. The presence of the NAT enabled rapid penetration of the chemical and shortened a process time of CLO. Therefore chemical attack of GaN is reduced as process time decreases. Scanning electron microscopy (SEM) was employed to confirm both the formation of NAT and the effect of NAT on chemical damage through CLO process and x-ray diffraction (XRD) was used for estimating degree of GaN crystallinity. |
| 저자 | 김철, 김대식, 정우섭, 조승희, 박준성, 고현아, 이두원, 안민주, 변동진 |
| 소속 | 고려대 |
| 키워드 | chemical lift off (CLO); network air tunnel (NAT); patterned sapphire substrate (PSS); gallium nitride (GaN); vertical LED |
