| 학회 |
한국화학공학회 |
| 학술대회 |
2017년 봄 (04/26 ~ 04/28, ICC 제주) |
| 권호 |
23권 1호, p.1013 |
| 발표분야 |
재료 |
| 제목 |
Molecular Dynamic Simulation for Contact Hole Etching Process under Fluorocarbon plasma |
| 초록 |
Plasma etch process for the high aspect ratio contact hole is emerging as one of the bottleneck process due to the tight process windows for next generation sub 10nm semiconductor device. Furthermore, it is well known that the predictable simulation for these processes is difficult to be achieved due to its inherent complexity. To address these issues, our group has developed a realistic and ultrafast 3D topography simulator of semiconductor plasma processing coupled with zero–D bulk plasma models. This simulator is composed of a multiple 3D level-set based moving algorithm, zero-D bulk plasma module, a 3D ballistic transport module coupled with charge-up simulation, and a surface reaction module. In this work, we introduce the molecular dynamic simulation coupled with 3D topography simulation or for the generation of high reliable database of plasma surface reaction such as sticking coefficient and angular dependence etch yield under fluorocarbon plasma. Finally, we demonstrate that the molecular dynamic simulation can concert with 3D topography simulation for highly reliable plasma simulation. |
| 저자 |
육영근, 유혜성, 최광성, 유동훈, 장원석, 임연호
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| 소속 |
전북대 |
| 키워드 |
화공소재 전반 |
| E-Mail |
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| 원문파일 |
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