| 학회 | 한국재료학회 |
| 학술대회 | 2021년 가을 (11/24 ~ 11/26, 경주 라한호텔) |
| 권호 | 27권 2호 |
| 발표분야 | A. 전자/반도체 재료 분과 |
| 제목 | Atomic layer deposition of Ru thin films using novel Ru(Ⅱ) precursor with enhanced reactivity |
| 초록 | Ruthenium (Ru) exhibits good chemical stability, thermal stability, low resistivity (~7 µΩˑcm), and a large work function(4.7 eV). Because it has these characteristics, Ruthenium (Ru) is in the spotlight in various applications such as DRAM capacitor electrodes, gate electrodes for silicon-based semiconductor device manufacturing. Miniaturization of semiconductors has led to the importance of atomic-level control of thin film deposition. Then, atomic layer deposition (ALD) is the most appropriate thin film deposition method because of its accurate thickness control and excellent step coating properties based on the self-limited reaction of precursors at the substrate surface. The selection of the appropriate precursor for the ALD process of a Ru thin film is very important. It can affect the growth characteristics and the film properties. Common precursors used in the ALD process for Ru thin films include bis(cyclopentadienyl)ruthenium(II), bis(ethylcyclopentadienyl)ruthenium(II), and 2,4-(dimethylpentadienyl)(ethylcyclopentadienyl, which are Ru oxidation number of +2 or tris(tetramethyl-heptanedionate)ruthenium(Ⅲ) which is Ru oxidation number of +3. However, precursors in the +2 or +3 oxidation states are in trouble with a long incubation cycle. Therefore, we need to develop a new precursor. In this study, a novel Ru precursor; Ru(L1)(L2) synthesized by the new manufacturing process. The precursor showed enhanced reactivity between the ligand and the active sites because of an open-coordinated ligand. During the Ru ALD process, self--limiting growth was achieved by varying the Ru precursor and O2 injection times. The characteristics of the Ru film were influenced by the substrate (TiN, Pt, SiO2). We also compared with another Ru precursor, Ru(η5-cycloheptadienyl)2, referred to as Ru(chd)2. It is that our team studied before, and it also had an open-coordinated structure. We made better results with Ru(L1)(L2) than Ru(chd)2. |
| 저자 | 오승훈1, 여승민1, 박현빈1, 박태주2, 정택모1, 엄태용1 |
| 소속 | 1한국화학(연), 2한양대 |
| 키워드 | <P>atomic layer deposition; Ruthenium; thin film; </P> |
