| 학회 |
한국재료학회 |
| 학술대회 |
2016년 가을 (11/16 ~ 11/18, 경주 현대호텔) |
| 권호 |
22권 2호 |
| 발표분야 |
A. 전자/반도체 재료 분과 |
| 제목 |
Investigation and origin of abnormal small heptagonal-shape etch pits on PVT grown C-face 4H silicon carbide |
| 초록 |
Silicon carbide (SiC) is widely used as an abrasive tool, automobile parts, power electronic devices, and so on. However, the defects such as basal plane dislocation (BPD), micropipe (MP), low angle grain boundary (LAGB), stacking fault (SF), threading edge dislocation (TED) and threading screw dislocation (TSD) hamper the development of SiC devices. The etching behavior of C-face SiC using molten KOH is investigated. Up to now, development of etch pits on C-face SiC is not easy because of high etch rate and an isotropic etching behavior. However, dislocation selective etch pits like that on Si-face are observed. Hexagonal etch pits originate with threading edge/screw dislocation. In addition to that, abnormal heptagonal-shape etch pits are observed also. To determine the origin of them, we have conducted transmission electron microscopy by two-beam technique. All the heptagonal-shape etch pits are connected to several basal plane dislocations. The basal plane dislocation, which is composed of two Shockley partial dislocation and stacking fault, induces change of etching plane orientation results in heptagonal-shape etch pit. |
| 저자 |
Myoungho Jeong1, Dong Yeob Kim2, Duy Khanh Tran3, Soon-Ku Hong4, Myoung-Chuel Chun3, Won-Jae Lee4, Tai-Hee Eun3, Jeong Yong Lee4
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| 소속 |
1Department of Materials Science and Engineering, 2Korea Advanced Institute of Science and Technology (KAIST), 3Department of Advanced Materials Engineering, 4Chungnam National Univ. |
| 키워드 |
c- face silicon carbide; transmission electron microscopy; two beam technique; etch pit; partial dislocation; basal plane dislocation.
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| E-Mail |
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