| 학회 | 한국재료학회 |
| 학술대회 | 2005년 봄 (05/26 ~ 05/27, 무주리조트) |
| 권호 | 11권 1호 |
| 발표분야 | 반도체재료 |
| 제목 | 플라즈마 기상 증착법에 의한 보론카바이드 박막의 RF 변화에 따른 효과 |
| 초록 | These are really only four elements suitable for forming solid state semiconductor neutron detectors - B, Cd, Gd and Li. Lithium semiconductors exist (LiInS2, LiInSe2, LiZnP) but are difficult to fabricate reliably into devices and are very difficult materials with which to work. Gd conversion-layer-based Si diodes have been fabricated and proposed for neutron detection, but are unlikely to be particularly stable. Cadmium zinc telluride has yielded thermal neutron detection and the Cd neutron capture cross section is high, but the neutron capture produces such high energy γ-rays(＞0.5 MeV) that the detectors must be large in order to detect these γ-rays efficiently. Boron absorbs neutrons efficiently and should yield an excellent solid-state detector if a suitable semiconductor material is found. recently, a very robust, structurally forgiving boron-rich semiconductor-boron carbide prepared by chemical vapor deposition (CVD) methods-has successfully been used in heterojunction diodes, homojunction diodes, transistors, and tunnel diodes. Here we demonstrate that this semiconductor yields single neutron detection and forms the basis for a whole class of solid state neutron detectors. The samples were fabricated by PECVD from a single source compound closo-1,2-dicarbadodecaborane (C2B10H12 ; orthocarbonane). The substrates were further cleaned by Ar+ bombardment at 200~500mTorr, 30W in the vacuum system. Deposition was carried out in a custom designed 13.56 MHz radio-frequency plasma enhanced chemical vapor deposition (PECVD) reactor. Ohmic connections were made to Si and BC(boron carbide) layers by Ag. Physical and electrical properties were analyzed. |
| 저자 | 연대흠, 진정근, 김길영, 강호재, 박현규, 변동진 |
| 소속 | 고려대 |
| 키워드 | Boron carbide; PECVD |
