검색결과 : 28건
| No. | Article |
|---|---|
| 1 |
Assigning chemical configurations to the XPS features observed at pristine (100) Si surface resulting after etching in HF aqueous solution Cerofolini GF, Romano E, Narducci D, Belanzoni P, Giorgi G Applied Surface Science, 256(21), 6330, 2010 |
| 2 |
Influence of chemical additives on the surface reactivity of Si in KOH solution Philipsen HGG, Kelly JJ Electrochimica Acta, 54(13), 3526, 2009 |
| 3 |
Growth kinetics of Si and SiGe on Si(100), Si(110) and Si(111) surfaces Hartmann JM, Burdin M, Rolland G, Billon T Journal of Crystal Growth, 294(2), 288, 2006 |
| 4 |
Atom manipulation and image artifact on Si(111)7 x 7 surface using a low temperature noncontact atomic force microscope Sugawara Y, Sano Y, Suehira N, Morita S Applied Surface Science, 188(3-4), 285, 2002 |
| 5 |
Influence of the plasma pretreatment of GaAs(100) and Si(100) surfaces on the optical and structural properties of Si3N4/GaAs and a-SiGe/Si interfaces Pincik E, Jergel M, Kucera M, van Swaaij RACMM, Ivanco J, Senderak R, Zeman M, Mullerova J, Brunel M Applied Surface Science, 166(1-4), 72, 2000 |
| 6 |
Kinetic study of 3C-SiC growth on Si by pyrolyzing tetramethysilane in low pressure radio frequency-induction heated chemical vapor deposition reactor Kim KC, Nahm KS, Hahn YB, Lee YS, Byun HS Journal of Vacuum Science & Technology A, 18(3), 891, 2000 |
| 7 |
The heteroepitaxy of II-VI compounds on the non-isovalent substrates (ZnTe/Si) Sidorov YG, Yakushev MV, Pridachin DN, Varavin VS, Burdina LD Thin Solid Films, 367(1-2), 203, 2000 |
| 8 |
Initial stages of heteroepitaxy of GaP on selected silicon surfaces Sukidi N, Bachmann KJ, Narayanan V, Mahajan S Journal of the Electrochemical Society, 146(3), 1147, 1999 |
| 9 |
Nickel-induced effect on the surface morphology of rapid-quenched Si(111) Fukuda T Journal of Vacuum Science & Technology A, 17(5), 2800, 1999 |
| 10 |
Infrared study of Si surfaces and buried interfaces Milekhin A, Friedrich M, Hiller K, Wiemer M, Gessner T, Zahn DRT Journal of Vacuum Science & Technology B, 17(4), 1733, 1999 |