화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Improved retention times in UTBOX nMOSFETs for 1T-DRAM applications
Sasaki KRA, Nicoletti T, Almeida LM, dos Santos SD, Nissimoff A, Aoulaiche M, Simoen E, Claeys C, Martino JA
Solid-State Electronics, 97, 30, 2014
2 Optimizing the front and back biases for the best sense margin and retention time in UTBOX FBRAM
Almeida LM, Sasaki KRA, Caillat C, Aoulaiche M, Collaert N, Jurczak M, Simoen E, Claeys C, Martino JA
Solid-State Electronics, 90, 149, 2013