| 1 |
Experimental observation of zero DIBL in short-channel hysteresis-free ferroelectric-gated FinFET
Shin J, Shin C
Solid-State Electronics, 153, 12, 2019 |
| 2 |
Device scaling considerations for sub-90-nm 2-bit/cell split-gate flash memory cell
Xu ZZ, Liu DH, Hu J, Chen WJ, Qian WS, Kong WR, Zou SC
Solid-State Electronics, 152, 46, 2019 |
| 3 |
Improvement in drain-induced-barrier-lowering and on-state current characteristics of bulk Si fin field-effect-transistors using high temperature Phosphorus extension ion implantation
Kikuchi Y, Hopf T, Mannaert G, Everaert JL, Kubicek S, Eyben P, Waite A, Borniquel JID, Variam N, Mocuta D, Horiguchi N
Solid-State Electronics, 152, 58, 2019 |
| 4 |
High frequency noise calculation in Schottky metal-semiconductor-metal structure and parameter retrieval of nanometric CdTe structure
Elhadidy H, Mahi FZ, Franc J, Musiienko A, Dedic V, Schneeweiss O
Thin Solid Films, 645, 340, 2018 |
| 5 |
A unified analytical drain current model for Double-Gate Junctionless Field-Effect Transistors including short channel effects
Raksharam, Dutta AK
Solid-State Electronics, 130, 33, 2017 |
| 6 |
On the design of GaN vertical MESFETs on commercial LED sapphire wafers
Atalla MRM, Elahi AMN, Mo C, Jiang ZY, Liu J, Ashok S, Xu J
Solid-State Electronics, 126, 23, 2016 |
| 7 |
A novel scaling theory for fully depleted pi-gate (Pi G) MOSFETs
Chiang TK
Solid-State Electronics, 103, 199, 2015 |
| 8 |
A theoretical and experimental approach to the adiabaticity of diffusional electron transfer processes. Electroreduction of 2-nitropropane on mercury microelectroelectrodes
Laborda E, Suwatchara D, Batchelor-McAuley C, Compton RG
Journal of Electroanalytical Chemistry, 704, 102, 2013 |
| 9 |
Revisited parameter extraction methodology for electrical characterization of junctionless transistors
Jeon DY, Park SJ, Mouis M, Berthome M, Barraud S, Kim GT, Ghibaudo G
Solid-State Electronics, 90, 86, 2013 |
| 10 |
Threshold voltage, and 2D potential modeling within short-channel junctionless DG MOSFETs in subthreshold region
Holtij T, Schwarz M, Kloes A, Iniguez B
Solid-State Electronics, 90, 107, 2013 |
