검색결과 : 12건
| No. | Article |
|---|---|
| 1 |
Tyrosine-Coordinated P-Cluster in G. diazotrophicus Nitrogenase: Evidence for the Importance of O-Based Ligands in Conformationally Gated Electron Transfer Owens CP, Katz FEH, Carter CH, Oswald VF, Tezcan FA Journal of the American Chemical Society, 138(32), 10124, 2016 |
| 2 |
Evidence for Functionally Relevant Encounter Complexes in Nitrogenase Catalysis Owens CP, Katz FEH, Carter CH, Luca MA, Tezcan FA Journal of the American Chemical Society, 137(39), 12704, 2015 |
| 3 |
Development of epitaxial SiC processes suitable for bipolar power devices Sumakeris JJ, Das MK, Ha S, Hurt E, Irvine K, Paisley MJ, O'Loughlin MJ, Palmour JW, Skowronski M, Hobgood HM, Carter CH Materials Science Forum, 483, 155, 2005 |
| 4 |
Silicon carbide crystal and substrate technology: A survey of recent advances Hobgood HM, Brady MF, Calus MR, Jenny JR, Leonard RT, Malta DP, Muller SG, Powell AR, Tsvetkov VF, Glass RC, Carter CH Materials Science Forum, 457-460, 3, 2004 |
| 5 |
Development of large diameter high-purity semi-insulating 4H-SiC wafers for microwave devices Jenny JR, Malta DP, Calus MR, Muller SG, Powell AR, Tsvetkov VF, Hobgood HM, Glass RC, Carter CH Materials Science Forum, 457-460, 35, 2004 |
| 6 |
Large diameter 4H-SiC substrates for commercial power applications Powell AR, Leonard RT, Brady MF, Muller SG, Tsvetkov VF, Trussell R, Sumakeris JJ, Hobgood HM, Burk AA, Glass RC, Carter CH Materials Science Forum, 457-460, 41, 2004 |
| 7 |
Approaches to stabilizing the forward voltage of bipolar SiC devices Sumakeris JJ, Das M, Hobgood HM, Muller SG, Paisley MJ, Ha S, Skowronski M, Palmour JW, Carter CH Materials Science Forum, 457-460, 1113, 2004 |
| 8 |
High quality SiC substrates for semiconductor devices: From research to industrial production Muller SG, Brady MF, Brixius WH, Fechko G, Glass RC, Henshall D, Hobgood HM, Jenny JR, Leonard R, Malta D, Powell A, Tsvetkov VF, Allen S, Palmour J, Carter CH Materials Science Forum, 389-3, 23, 2002 |
| 9 |
Sublimation-grown semi-insulating SIC for high frequency devices Muller SG, Brady MF, Brixius WH, Glass RC, Hobgood HM, Jenny JR, Leonard RT, Malta DP, Powell AR, Tsvetkov VF, Allen ST, Palmour JW, Carter CH Materials Science Forum, 433-4, 39, 2002 |
| 10 |
Large diameter, low defect silicon carbide boule growth Carter CH, Glass R, Brady M, Malta D, Henshall D, Muller S, Tsvetkov V, Hobgood D, Powell A Materials Science Forum, 353-356, 3, 2001 |