화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 Temperature dependence of charge transport in zinc oxide nanosheet source-gated transistors
Dahiya AS, Opoku C, Cayrel F, Valente D, Poulin-Vittrant G, Camara N, Alquier D
Thin Solid Films, 617, 114, 2016
2 Surface state of GaN after rapid-thermal-annealing using AlN cap-layer
El-Zammar G, Khalfaoui W, Oheix T, Yvon A, Collard E, Cayrel F, Alquier D
Applied Surface Science, 355, 1044, 2015
3 Characterization of in-depth cavity distribution after thermal annealing of helium-implanted silicon and gallium nitride
Fodor B, Cayrel F, Agocs E, Alquier D, Fried M, Petrik P
Thin Solid Films, 571, 567, 2014
4 Systematic Study of Anodic Etching of Highly Doped N-type 4H-SiC in Various HF Based Electrolytes
Gautier G, Biscarrat J, Valente D, Defforge T, Gary A, Cayrel F
Journal of the Electrochemical Society, 160(9), D372, 2013
5 AFM study of the SIMS beam induced roughness in monocrystalline silicon in presence of initial surface or bulk defects of nanometric size
Fares B, Dubois C, Gautier B, Dupuy JC, Cayrel F, Gaudin G
Applied Surface Science, 252(19), 6448, 2006
6 Depth distribution of disorder and cavities in high dose helium implanted silicon characterized by spectroscopic ellipsometry
Petrik P, Cayrel F, Fried M, Polgar O, Lohner I, Vincent L, Alquier D, Gyulai J
Thin Solid Films, 455-56, 344, 2004