검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Room temperature yellow InGaAlP quantum dot laser Ledentsov NN, Shchukin VA, Shernyakov YM, Kulagina MM, Payusov AS, Gordeev NY, Maximov MV, Zhukov AE, Karachinsky LY, Denneulin T, Cherkashin N Solid-State Electronics, 155, 129, 2019 |
| 2 |
Quantum dot 850 nm VCSELs with extreme high temperature stability operating at bit rates up to 25 Gbit/s at 150 degrees C Ledentsov N, Agustin M, Shchukin VA, Kropp JR, Ledentsov NN, Chorchos L, Turkiewicz JP, Khan Z, Cheng CL, Shi JW, Cherkashin N Solid-State Electronics, 155, 150, 2019 |
| 3 |
Morphology of GaAs crystals heterogeneously integrated on nominal (001) Si by epitaxial lateral overgrowth on tunnel oxide via Ge nano-seeding Coste M, Moliere T, Cherkashin N, Hallais G, Vincent L, Bouchier D, Renard C Thin Solid Films, 647, 13, 2018 |
| 4 |
Growth of high quality micrometer scale GaAs/Si crystals from (001) Si nano-areas in SiO2 Renard C, Cherkashin N, Jaffre A, Moliere T, Hallais G, Vincent L, Alvarez J, Mencaraglia D, Michel A, Bouchier D Journal of Crystal Growth, 401, 554, 2014 |
| 5 |
Amorphization, recrystallization and end of range defects in germanium Claverie A, Koffel S, Cherkashin N, Benassayag G, Scheiblin P Thin Solid Films, 518(9), 2307, 2010 |
| 6 |
High germanium content SiGe virtual substrates grown at high temperatures Bogumilowicz Y, Hartmann JM, Laugier F, Rolland G, Billon T, Cherkashin N, Claverie A Journal of Crystal Growth, 283(3-4), 346, 2005 |
| 7 |
Deactivation of solid phase epitaxy-activated boron ultrashallow junctions Lerch W, Paul S, Niess J, Cristiano F, Lamrani Y, Calvo P, Cherkashin N, Downey DF, Arevalo EA Journal of the Electrochemical Society, 152(10), G787, 2005 |
| 8 |
Si nanocrystals by ultra-low-energy ion beam-synthesis for non-volatile memory applications Bonafos C, Coffin H, Schamm S, Cherkashin N, Ben Assayag G, Dimitrakis P, Normand P, Carrada M, Paillard V, Claverie A Solid-State Electronics, 49(11), 1734, 2005 |