검색결과 : 9건
No. | Article |
---|---|
1 |
Effect of buried Si/SiO2 interface on dopant and defect evolution in preamorphizing implant ultrashallow junction Hamilton JJ, Colombeau B, Sharp JA, Cowern NEB, Kirkby KJ, Collart EJH, Bersani M, Giubertoni D Journal of Vacuum Science & Technology B, 24(1), 442, 2006 |
2 |
Co-implantation with conventional spike anneal solutions for 45 nm n-type metal-oxide-semiconductor ultra-shallow junction formation Collart EJH, Felch SB, Pawlak BJ, Absil PP, Severi S, Janssens T, Vandervorst W Journal of Vacuum Science & Technology B, 24(1), 507, 2006 |
3 |
Electrical characterization of ultrashallow dopant profiles Clarysse T, Vandervorst W, Collart EJH, Murrell AJ Journal of the Electrochemical Society, 147(9), 3569, 2000 |
4 |
Cluster formation during annealing of ultra-low-energy boron-implanted silicon Collart EJH, Murrell AJ, Foad MA, van den Berg JA, Zhang S, Armour D, Goldberg RD, Wang TS, Cullis AG Journal of Vacuum Science & Technology B, 18(1), 435, 2000 |
5 |
Process interactions between low-energy ion implantation and rapid-thermal annealing for optimized ultrashallow junction formation Murrell AJ, Collart EJH, Foad MA, Jennings D Journal of Vacuum Science & Technology B, 18(1), 462, 2000 |
6 |
Process integration issues for doping of ultrashallow junctions Current MI, Foad MA, Murrell AJ, Collart EJH, de Cock G, Jennings D Journal of Vacuum Science & Technology B, 18(1), 468, 2000 |
7 |
Use of two beam energies in secondary ion mass spectrometry analysis of shallow implants: Resolution-matched profiling Cooke GA, Ormsby TJ, Dowsett MG, Parry C, Murrell A, Collart EJH Journal of Vacuum Science & Technology B, 18(1), 493, 2000 |
8 |
Characterization of low-energy (100 eV 10 keV) boron ion implantation Collart EJH, Weemers K, Gravesteijn DJ, van Berkum JGM Journal of Vacuum Science & Technology B, 16(1), 280, 1998 |
9 |
Secondary ion mass spectrometry depth profiling of ultralow-energy ion implants : Problems and solutions van Berkum JGM, Collart EJH, Weemers K, Gravesteijn DJ, Iltgen K, Benninghoven A, Niehuis E Journal of Vacuum Science & Technology B, 16(1), 298, 1998 |