화학공학소재연구정보센터
검색결과 : 9건
No. Article
1 Effect of buried Si/SiO2 interface on dopant and defect evolution in preamorphizing implant ultrashallow junction
Hamilton JJ, Colombeau B, Sharp JA, Cowern NEB, Kirkby KJ, Collart EJH, Bersani M, Giubertoni D
Journal of Vacuum Science & Technology B, 24(1), 442, 2006
2 Co-implantation with conventional spike anneal solutions for 45 nm n-type metal-oxide-semiconductor ultra-shallow junction formation
Collart EJH, Felch SB, Pawlak BJ, Absil PP, Severi S, Janssens T, Vandervorst W
Journal of Vacuum Science & Technology B, 24(1), 507, 2006
3 Electrical characterization of ultrashallow dopant profiles
Clarysse T, Vandervorst W, Collart EJH, Murrell AJ
Journal of the Electrochemical Society, 147(9), 3569, 2000
4 Cluster formation during annealing of ultra-low-energy boron-implanted silicon
Collart EJH, Murrell AJ, Foad MA, van den Berg JA, Zhang S, Armour D, Goldberg RD, Wang TS, Cullis AG
Journal of Vacuum Science & Technology B, 18(1), 435, 2000
5 Process interactions between low-energy ion implantation and rapid-thermal annealing for optimized ultrashallow junction formation
Murrell AJ, Collart EJH, Foad MA, Jennings D
Journal of Vacuum Science & Technology B, 18(1), 462, 2000
6 Process integration issues for doping of ultrashallow junctions
Current MI, Foad MA, Murrell AJ, Collart EJH, de Cock G, Jennings D
Journal of Vacuum Science & Technology B, 18(1), 468, 2000
7 Use of two beam energies in secondary ion mass spectrometry analysis of shallow implants: Resolution-matched profiling
Cooke GA, Ormsby TJ, Dowsett MG, Parry C, Murrell A, Collart EJH
Journal of Vacuum Science & Technology B, 18(1), 493, 2000
8 Characterization of low-energy (100 eV 10 keV) boron ion implantation
Collart EJH, Weemers K, Gravesteijn DJ, van Berkum JGM
Journal of Vacuum Science & Technology B, 16(1), 280, 1998
9 Secondary ion mass spectrometry depth profiling of ultralow-energy ion implants : Problems and solutions
van Berkum JGM, Collart EJH, Weemers K, Gravesteijn DJ, Iltgen K, Benninghoven A, Niehuis E
Journal of Vacuum Science & Technology B, 16(1), 298, 1998