검색결과 : 25건
| No. | Article |
|---|---|
| 1 |
Room-temperature fabrication of a Ga-Sn-O thin-film transistor Matsuda T, Takagi R, Umeda K, Kimura M Solid-State Electronics, 134, 19, 2017 |
| 2 |
Simulation and experimental study of 3-step junction termination extension for high-voltage 4H-SiC gate turn-off thyristors Lin L, Zhao JH Solid-State Electronics, 86, 36, 2013 |
| 3 |
A Discontinuous PWM Method for Balancing the Neutral Point Voltage in Three-Level Inverter-Fed Variable Frequency Drives Ben-Brahim L IEEE Transactions on Energy Conversion, 23(4), 1057, 2008 |
| 4 |
A 3.5 kV thyristor in 4H-SiC with a JTE periphery Brosselard P, Bouchet T, Planson D, Scharnholz S, Paques G, Lazar M, Raynaud C, Chante JP, Spahn E Materials Science Forum, 483, 1005, 2005 |
| 5 |
SiC devices for high voltage high power applications Sugawara Y Materials Science Forum, 457-460, 963, 2004 |
| 6 |
Fabrication and characterisation of high-voltage SiC-thyristors Zorngiebel V, Scharnholz S, Spahn E, Brosselard P, Arssi N, Chante JP, Planson D, Raynaud C, Spangenberg B, Kurz H Materials Science Forum, 433-4, 883, 2002 |
| 7 |
Characteristics of epitaxial and implanted N-base 4H-SiC GTO thyristors Fedison JB, Chow TP Materials Science Forum, 353-356, 739, 2001 |
| 8 |
Spectra of Ar-CO2 from ab initio potential energy surfaces Misquitta AJ, Bukowski R, Szalewicz K Journal of Chemical Physics, 112(12), 5308, 2000 |
| 9 |
Theoretical and experimental study of 4H-SiC junction edge termination Li XQ, Tone K, Cao LH, Alexandrov P, Fursin L, Zhao JH Materials Science Forum, 338-3, 1375, 2000 |
| 10 |
2600 V, 12 A, 4H-SiC, asymmetrical Gate Turn Off (GTO) Thyristor development Agarwal A, Ryu SH, Singh R, Kordina O, Palmour JW Materials Science Forum, 338-3, 1387, 2000 |