검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Growth and characterization of epitaxial Ti3GeC2 thin films on 4H-SiC(0001) Buchholt K, Eklund P, Jensen J, Lu J, Ghandi R, Domeij M, Zetterling CM, Behan G, Zhang H, Spetz AL, Hultman L Journal of Crystal Growth, 343(1), 133, 2012 |
| 2 |
Kinetic Model of SiGe Selective Epitaxial Growth using RPCVD Technique Kolahdouz M, Maresca L, Ghandi R, Khatibi A, Radamson HH Journal of the Electrochemical Society, 158(4), H457, 2011 |
| 3 |
Selective epitaxial growth of B-doped SiGe and HCl etch Si for the formation of SiGe:B recessed source and drain (pMOS transistors) Radamson HH, Kolahdouz M, Ghandi R, Hallstedt J Thin Solid Films, 517(1), 84, 2008 |
| 4 |
The influence of Si coverage in a chip on layer profile of selectively grown Si(1-x)Ge(x) layers using RPCVD technique Kolahdouz M, Ghandi R, Hallstedt J, Osling M, Wise R, Wejtmans H, Radamson HH Thin Solid Films, 517(1), 257, 2008 |
| 5 |
Effect of strain, substrate surface and growth rate on B-doping in selectively grown SiGe layers Ghandi R, Kolahdouz M, Hallstedt J, Wise R, Wejtmans H, Radamson HH Thin Solid Films, 517(1), 334, 2008 |