검색결과 : 31건
| No. | Article |
|---|---|
| 1 |
SiC and ill-nitride growth in a hot-wall CVD reactor Janzen E, Bergman JP, Danielsson O, Forsberg U, Hallin C, Ul Hassan J, Henry A, Ivanov IG, Kakanakova-Georgieva A, Persson P, ul Wahab Q Materials Science Forum, 483, 61, 2005 |
| 2 |
High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on Sublimation Grown Epitaxial Material Sveinbjornsson EO, Olafsson HO, Gudjonsson G, Allerstam F, Nilsson PA, Syvajarvi M, Yakimova R, Hallin C, Rodle T, Jos R Materials Science Forum, 483, 841, 2005 |
| 3 |
A 4H-SiC BJT with an epitaxially regrown extrinsic base layer Danielsson E, Domeij M, Lee HS, Zetterling CM, Ostling M, Schoner A, Hallin C Materials Science Forum, 483, 905, 2005 |
| 4 |
Homoepitaxial on-axis growth of 4H-and 6H-SIC by CVD Hallin C, Wahab Q, Ivanov I, Bergman P, Janzen E Materials Science Forum, 457-460, 193, 2004 |
| 5 |
Growth of homoepitaxial films on 4H-SiC(1120) and 8 degrees off-axis 4H-SiC(0001) substrates and their characterization Bishop SM, Preble EA, Hallin C, Henry A, Storasta L, Jacobson H, Wagner BP, Reitmeier Z, Janzen E, Davis RF Materials Science Forum, 457-460, 221, 2004 |
| 6 |
Annealing behaviour of vacancy- and antisite-related defects in electron-irradiated 4H-SiC Zolnai Z, Son NT, Magnusson B, Hallin C, Janzen E Materials Science Forum, 457-460, 473, 2004 |
| 7 |
4H-SiC Power Schottky diodes. On the way to solve size limiting issues Syrkin A, Dmitriev V, Soukhoveev V, Mynbaeva M, Kakanakov R, Hallin C, Janzen E Materials Science Forum, 457-460, 985, 2004 |
| 8 |
A comparison between SiO2/4H-SiC interface traps on (0001) and (1120) faces Olafsson HO, Hallin C, Sveinbjornsson EO Materials Science Forum, 457-460, 1305, 2004 |
| 9 |
Reducing stress in silicon carbide epitaxial layers Danielsson O, Hallin C, Janzen E Journal of Crystal Growth, 252(1-3), 289, 2003 |
| 10 |
The neutral silicon vacancy in SiC: Ligand hyperfine interaction Wagner M, Thinh NQ, Son NT, Baranov PG, Mokhov EN, Hallin C, Chen WM, Janzen E Materials Science Forum, 389-3, 501, 2002 |