| 1 |
Interface diffusion characteristics of Al-2 at.%Nd/n + a-Si:H and Al-2 at.%Nd/n + poly-Si bilayers
Choi N, Yoon SY, Kim CD, Hatalis M
Thin Solid Films, 520(6), 1982, 2012 |
| 2 |
Amorphous Oxide Thin Film Transistors with Methyl Siloxane Based Gate Dielectric on Paper Substrate
Choi N, Khan SA, Ma XX, Hatalis M
Electrochemical and Solid State Letters, 14(6), H247, 2011 |
| 3 |
Effects of mechanical strain on laser crystallized polysilicon thin film transistors and ring oscillators fabricated on stainless steel foil
Jamshidi-Roudbari A, Kuo PC, Hatalis M
Solid-State Electronics, 52(10), 1594, 2008 |
| 4 |
Process technology for high-resolution AM-PLED displays on flexible metal-foil substrates
Chuang TK, Troccoli M, Kuo PC, Jamshidi-Roudbari A, Hatalis M, Voutsas AT, Afentakis T
Electrochemical and Solid State Letters, 10(8), J92, 2007 |
| 5 |
Trade off between polysilicon film quality and thin film transistor operational amplifier DC gain
Afentakis T, Hatalis M
Solid-State Electronics, 46(9), 1421, 2002 |
| 6 |
A simple analytical model for the dependence of the propagation delay of the polycrystalline silicon CMOS inverter on temperature
Afentakis T, Hatalis M
Solid-State Electronics, 46(12), 2301, 2002 |
| 7 |
Characterization and modeling of fast programming bits in flash EEPROM
Nkansah F, Hatalis M, Olasupo K
Solid-State Electronics, 44(11), 1887, 2000 |
| 8 |
Nonerratic behavior of overerased bits in flash EEPROM
Nkansah FD, Prinz E, Hatalis M
Journal of Vacuum Science & Technology B, 16(6), 3065, 1998 |
